UDC 621.315.592

Switching and memory effects in Al-SiO₂-Si MOS structures

Iskender-zade Z. A., Akhundov M. R.,
Jafarova E. A., Alikhanova Sh. A.

Complex of techniques: volt-ampere, nonstationary transient behaviour, are found out mechanisms of effect of switching and memory in Al-SiO₂-Si structures, an opportunity of their practical use in creation of stable and controlled switches and memory element.

Azerbaijan, Baku, Azerbaijan Technical University, Institute of Physics of NAS of Azerbaijan.