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UDC 621.391.882 Changes low-frequency noise in ð-n-junctions at low temperatures Golovko A. G. The results of experimental researches of the diode on a basis of GaAs in a temperature range 78-300 K to are given. It is offered at development of the equipment previously to estimate stability of work of semiconductor quages in a range of the lowered temperatures on the basis of the analysis generation-recombination of processes and Frenkel ionization of impurity. Ukraine, Kherson, «Arthur» SPC. |