UDC 621.382.2.029.64

Development of design and technology of Gunn diodes for EHE-therapy

V. N. Ivanov, V. M. Kovtonjuk, N. S. Raevka

The article deals with design and technology of Gunn diodes production to be used for EHF-therapy. Operating frequency is 42 GHz, output power more than 1 mW at operating currency less than 120 mA. Diodes are made of GaAs epitaxial structures of n-n⁺ type.Thickness of n-layer is 2,4-2,6 mm, carrier density (8...9)·10¹⁵ cm^-3. As a cathode multilayer contact Ge-Au-TiB₂-Au is used, which was applied layer to layer on n-layer surface by magnetron sputtering method in argon atmosphere. Ohmic contact formation on n-layer surface sets up inhomogeneity that provides domen generation in this place.

Ukraine, Kiev, RI «Orion».