UDC 621.315.592

Oxide-InSe(GaSe) semicondactor heterojunctions for polarized radiation photoelectric analyzers

Kovalyuk Z. D., Katerynchuk V. M.

In oxide-p-InSe and n+-In₂O₃-p-GaSe heterojunctions the photopleochroism effect is investigated in a wide spectral range. Maximum values of the photopleochroism coefficient (in the Іn₂O₃-GaSe heterojunction it achieves 65% and in the oxide-ІnSe one it is 40%) are obtained for the edge absorption with the crystals. It coincides with the radiation wave-lengths of red ruby (λ=0,6328 mm) and infrared neodymium (λ=1,06 mm) lasers. A monotonous decrease of polarization photosensitivity takes place in a depth of the fundamental absorption band.

Ukraine, Chernovtsy Department of I. N. Frantsevich Institute of Material Science Problems.