UDC 621.315.592.2: 534.2: 537.311.322

Acoustostimulated decrease the annealing temperature of radiation defects in the Ge crystals

Ja. M. Olikh, I. O. Lysiuk, M. D. Tymochko

An original annealing method of semiconductors in the terms in-situ an ultrasound influence (f=5÷10 МHz, W<10⁴ W/msup>2) is described. On the model samples of a neutron-transmutation Ge (Ф_n≈10¹⁵ cm^-2) the isochronal annealing of the radiation defects (Т_an=90÷460°С, t=30 min, ΔТ_an=30°С) is realized. The comparative results of measurements of electrical parameters (by Hall method in Т=77÷300 К range) are presented. It is finding that the US influence mechanism have been reduced to an acceleration of the point defects diffusion. It is argued that this is the result of the activation energy decrease and the increase of the non-equilibrium defects concentration.

Ukraine, Kiev, V. Ye. Lashkariov Institute of Physics of Semiconductors of NASU.