|
UDC 621.383.52.8 Optimization of the geometrical characteristics of ð-n-structures for an optoelectronics Vikulin I. Ì., Irkha V. I., Korobitsyn B. V., Gorbachev V. E. The relations of the optimum geometrical characteristics of the ð-n-structures for their usage as a light-emitting diodes or a photodetectors is considered. The possibility of using of an electroluminescence of ð-n-structures for operational development them at manufacture of photodetectors is surveyed. The application of detected dependences for an example gallium arsenide ð-n-structures is shown. Odessa Popov National Academy of Communication. |