UDC 621.793.1

Formation of bumps for GaAs pixel detectors

Z. V. Berishvili, L. V. Jangidze, G. A. Skhiladze,
R. G. Melkadze, T. M. Lezhneva, G. G. Peradze

In fabrication of hybrid pixel detectors of ionizing radiation a sensor matrix is connected to a readout device by means of bumps using the flip-chip technology. The present work deals with research and development of processes of Pb/Sn and In bump formation on sensor GaAs matrices designed for X-ray radiation detectors. The TiW/Ag system deposited by magnetron sputtering is proposed as under-bump metallization. Technological regimes, sequence of operations and parameters of the obtained bumps are given.

Georgia, Tbilisi State University.