UDC 621.382.049

Investigation of MOSFET-transistors in different hermetic package types for surface mounting

I. I. Rubtsevitch, L. P. Anufriev, A. F. Kerentsev

The processes of MOSFET packaging in SMD-1 metaloceramic package versus SMD-220 metal-plastic package have been explored. The results on electrical and thermal parameters are set out. It is shown that thermal resistance p-n junction to case Rthjc is higher for SMD-1 due to a lower heat conduction of the chip carrier. However, the compliance of the SMD-1 elements in coefficient of thermal linear expansion allows to produce devices with minimal internal strains and to secure their high hermiticity and reliability when subject to temperature fluctuations over 300°С.

Republic of Belarus, Minsk, “Transistor” Plant.