UDC 621.315.592

The micronegatron transduer of pressure on the base of selicon MOS-structure

Gasanov A. M., Kasimov F. D., Lutfalibekova A. E.

The influence of local anisotrophic pressure on the silicon MOS-structure investigated. The negatron circuit of converting pressure in frequency for remote measurement is offered.

Azerbaijan, Baku, National Aerospace Agency.