UDC 536.2:536.3

The processes to improve the thermal mode of GaAs crystal growth by Czohralski method

Kovtun G. P., Kravchenko A. I., Kondrik A. I., Shcherban' A. P.

The liquid encapsulation Czohralski method for GaAs with auxiliary heater (AH) imbedded into the flux is shown. The dependences of temperature gradient near the crystallization front vs. AH-power as well as distance between AH and crystal are investigated. The conditions of heat screening at different heat flows through the bottom and wall of crucible are investigated too. The conditions under which the best results achieved are shown (with taking into account the values of G and uniformity of their radial distributions).

Ukraine, National Science Center «Kharkov Institute of Physics and Technology».