UDC 621.382.3

Small signal transistor model for microwave low noise amplifier development

Yemtsev P. A.

The semi-analytical methodic for high electron mobility transistor parameter extraction is presented. The methodic requires S-parameter data, measured in wide frequency range only. The fundamentals of model decomposition are presented. The example of amplifier design for model verification is given.

Ukraine, Kiev, NTUU «Kiev Polytechnic Institute».