UDC 621.317.7

Readput circuit design for middlewavelenght IR photodiodes

Reva V. P., Sizov F. F.

Problems of readout devices design for IR photodiode arrays, e.g., on the base of InSb or HgCdTe for information read out and processing, are discussed. Read out devices potential resources are considered from the point of view of applying contemporary design rules (0,25-1,2 microns). Some characteristics of the designed read out device of medium format for 128×128 diode pixel array, which was designed using moderate design rules of 1,2 micron, are discussed.

Ukraine, Kiev, RI of Microdevices, V. Ye. Lashkariov Institute of Physics of Semiconductors of NASU.