UDC 621.315.592

Quantum yield of interband radiative recombination in CdHgTe crystals

Vlasenko A. I., Vlasenko Z. K.

The calculation of the quantum yield inherent to the interband radiative recombination in CdHgTe crystals has been performed taking into account their composition, doping level, temperature as well as optical excitation level. It has been shown that the observed increase in the radiative recombination yield characterizing the recombination process in n- and p-types crystals within all the range of doping levels is caused by decreasing the temperature and growing forbidden gap width. In p-type crystals the same effect is also reached by doping with acceptor defects within definite limits depending on the material composition.

Ukraine, Kiev, V. Ye. Lashkariov Institute of Physics of Semiconductors of NASU.