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UDC 539.1.074 The simulation of properties of CdZnTe and parameters of γ-ray detectors basing on it Kondrik A. I. Life-time and mobility of charge carriers, specific resistance of CdxZn1-xTe:Cl material have been investigated by the computer simulation method with the purpose of determination such combination of these properties and mole fraction of CdTe to obtain the maximal charge collection efficiency in γ-ray detector basing on this material. The typical impurity content independent of obtaining method was chosen as initial that. It was shown that the investigated material has to be inhomogeneous one and its approximate properties distribution within interelectrode space of detector was found. Ukraine, National Science Center «Kharkov Institute of Physics and Technology». |